High Pure Silicon
نویسندگان
چکیده
منابع مشابه
Microwave synthesis of phase-pure, fine silicon carbide powder
Fine, monophasic silicon carbide powder has been synthesized by direct solid-state reaction of its constituents namely silicon and carbon in a 2.45 GHz microwave field. Optimum parameters for the silicon carbide phase formation have been determined by varying reaction time and reaction temperature. The powders have been characterized for their particle size, surface area, phase composition (X-r...
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amended in the light of a more detailed study of the development of the anode-fall region of the discharge. A pseudo-FDS may sometimes develop, leading to misleading results. (4) The minimum distance from the cathode at which the anode fall develops is strongly dependent on the dimensions of a hollow cathode as well as on the pressure and current density. (5) A distinction must be made between ...
متن کاملPreference for a propellane motif in pure silicon nanosheets.
Free standing silicene nanosheets remain elusive presumably due to the instability associated with sp(2) hybridized silicon atoms. Here we show that silicon prefers nanosheets based on the non-classical Si5 unit with a [1.1.1]-propellane motif that has two inverted tetrahedral atoms bridged by three tetrahedral atoms. DFT calculations show that nanosheets constructed exclusively from propellane...
متن کاملPure phonon anharmonicity and the anomalous thermal expansion of silicon
D.S. Kim, ∗ O. Hellman, J. Herriman, H.L. Smith, J.Y.Y. Lin, N. Shulumba, J.L. Niedziela, C.W. Li, D.L. Abernathy, and B. Fultz California Institute of Technology, Department of Applied Physics and Materials Science, Pasadena, California 91125, USA Neutron Data Analysis and Visualization Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA California Institute of Technology,...
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The Through Silicon Via (TSV) process developed by Silex provides down to 30 μm pitch for through wafer connections in up to 600 μm thick substrates. Integrated with MEMS designs it enables significantly reduced die size and true "Wafer Level Packaging" features that are particularly important in consumer market applications. The TSV technology also enables integration of advanced interconnect ...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1958
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.1.88